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High Temperature Superconducting LaAlO3 Single Crystal Substrate

Categories LaAlO3 Wafer
Brand Name: Crystro
Model Number: CR210123-1
Certification: SGS
Place of Origin: China
MOQ: 1pc
Price: Negotiable
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Delivery Time: 3-4 weeks
Packaging Details: Carton Package
Material: Laalo3/lao
Type: Round wafer
Diameter: 2"inch , 3"inch, 4''inch
Ra: <5A(5umx5um)
Polishing: double side polished
Surface finish: < 10A
Pack: 1000 level clean bag/transparent box
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High Temperature Superconducting LaAlO3 Single Crystal Substrate

High Temperature Superconducting Single Crystal Substrate Laalo3


LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

Crystro has a professional team with more than 15 years of production experience,we invests heavily in crystal R&D every year to improve products performance and develope new crystals.

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.


Main Properties:


Typical Physical Properties
Crystal StructureCubic a=3.79 Angstroms
Growth MethodCzochralski
Density6.52 g/cm3
Melt Point2080 oC
Thermal expansion10 (x10-6/ oC)
Dielectric Constant~ 25
Loss Tangent at 10 GHz~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and AppearanceTransparent to Brown based on annealing condition. Visible twins on polished substrate
Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC


Applications:


High Temperature Superconducting thin films

Giant magnetic thin films

Electronic devices,

high temperature fuel cell


Main Advantages:


Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

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