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| Categories | LaAlO3 Wafer |
|---|---|
| Brand Name: | Crystro |
| Model Number: | CR210122-6 |
| Certification: | SGS |
| Place of Origin: | China |
| MOQ: | 1pc |
| Price: | Negotiable |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 1000pcs/month |
| Delivery Time: | 3-4 weeks |
| Packaging Details: | 1000 clean room, 100 clean bag or single box packaging |
| Material: | Lanthanum Aluminate LaO Single Crystal Wafer |
| Size: | 3inchx0.5mm，3inchx0.6mm |
| Melt point(℃): | 2080 ℃ |
| Surface finish: | < 10A |
| Orientation: | <100>,<111> |
| Redirection precision: | ±0.2° |
| Density: | 6.52(g/cm3) |
| Type: | Round Flats |
| Company Info. |
| ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Lanthanum Aluminate LaO Single Crystal Wafer
LaAlO3 perovskite crystal structure of materials on a variety of good lattice matching is epitaxial HTS thin films and giant magnetoresistance excellent substrate material, its dielectric properties suitable for low loss microwave dielectric resonator and the application of . HB is the world's largest existing lanthanum aluminate single crystal growth of manufacturers, the monthly production of 10 to 20 kg can, can provide rods, sheets and cutting rough epitaxial substrate polishing to meet the diverse needs of the global market.
Our Company:
Anhui Crystro Crystal Materials Co., Ltd. is specialized in
research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials
research and development, manufacture and multidisciplinary
solutions. The service industries include: communications,
aerospace, automobile, medical, beauty and other industries.
Applications:
Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials
Main Advantages:
Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability
| Major Parameters | ||
| Crystal structure | M6(normal temperature) | M3(>435℃) |
| Unit cell constant | M6 a=5.357A c=13.22 A | M3 a=3.821 A |
| Melt point(℃) | 2080 ℃ | |
| Density | 6.52(g/cm3) | |
| Hardness | 6-6.5(mohs) | |
| Thermal expansion | 9.4x10-6/℃ | |
| Dielectric constants | ε=21 | |
| Secant loss(10ghz) | ～3×10-4@300k,～0.6×10-4@77k | |
| Color and appearance | To anneal and conditions differ from brown to brownish | |
| Chemical stability | Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C | |
| Characteristics | For microwave electron device | |
| Growth method | Czochralski method | |
| Size | Size upon request | |
| Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3″ | ||
| Thickness | 0.5mm,1.0mm | |
| Polishing | Single or double | |
| Crystal Orientation | ＜100＞ ＜110＞ ＜111＞ | |
| redirection precision | ±0.5° | |
| Redirection the edge: | 2°(special in 1°) | |
| Angle of crystalline | Special size and orientation are available upon request | |
| Ra: | ≤5Å(5µm×5µm) | |
| Pack | 1000 clean room, 100 clean bag or single box packaging | |
|
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