wireless charging vgs p channel mosfet

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

...MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs...

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.1 V Qg - Gate Charge...

Brand Name:Original Factory

Model Number:IMBF170R1K0M1

Place of Origin:CN

...MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V​ Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling higher frequency. Specification Of IMBF170R1K0M1 Part Number IMBF170R1K0M1 Rds On (Max) @ Id, Vgs 1000mOhm @ 1A, 15V Vgs(th) (Max) @ Id 5.7V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 5 nC @ 12 V Vgs...

Brand Name:Infineon Technologies

Model Number:SPD06N80C3

Place of Origin:CHINA

... Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8H02ETS

...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs...

Brand Name:FAIRCHILD

Model Number:SSS7N60B

Place of Origin:Original

...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

...MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id) / 25°C:14A (Tc) Drive Voltage (Max Rds On, Min Rds On):10V Rds On (Max) / Id, Vgs:380 mOhm / 7A, 10V Vgs(th) (Max) / Id:4.5V / 250µA Gate Charge (Qg) (Max) / Vgs:51nC / 10V Vgs...

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

...Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:JEUNKEI

Model Number:JY13M

Place of Origin:China

... complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features: Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=-12A <66mΩ@VGS=-4

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge...

Brand Name:onsemi

Model Number:NTE4153NT1G

...MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 915 mA Rds On - Drain-Source Resistance: 230 mOhms Vgs - Gate-Source Voltage: - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage: 450 mV Qg - Gate Charge...

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...CHANNEL POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS...

Brand Name:Original

Model Number:BSZ15DC02KDH

Place of Origin:Original

...MOSFET Mounting Style: SMD/SMT Package / Case: TSDSON-8 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.1 A, 3.2 A Rds On - Drain-Source Resistance: 41 mOhms, 97 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1.1 V, 1 V Qg - Gate Charge...

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:FDS7079ZN3

...electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Applications: • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS =

Brand Name:onsemi

Model Number:NTMFS4C024NT1G

....7A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V