undoped gan wafer

Brand Name:zmkj

Model Number:GaN-10x10.5mm

Place of Origin:CHINA

... several types of devices; the primary GaN devices are LEDs, laser diodes, power electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have

Brand Name:PAM-XIAMEN

Place of Origin:China

2 Inch Undoped GaN On Sapphire Substrates For LEDs And Solid-State Lighting Tech PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (...

Brand Name:zmkj

Model Number:GaN-FS-C-U-C50-SSP

Place of Origin:CHINA

...LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) 4inch 2inch free-standing GaN substrates HVPE GaN Wafers GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and

Brand Name:BonTek

Model Number:Silicon Wafer

Place of Origin:China

...Silicon Wafer With High Resistivity For Semiconductor Silicon wafers are thin slices of pure crystalized silicon. These pure forms of wafers are normally called undoped or intrinsic silicon wafer. One of the reasons for using Silicon wafer in semiconductor...

Country/Region:china

GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN

Place of Origin:China

...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ...

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ...

Brand Name:CAEC

Place of Origin:Henan, China

..., corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer. Application ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for