ultra low 0 0015 power mosfet

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

Ultra-Low 0.0015andOmega; Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Japan

...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are

Brand Name:onsemi

Model Number:FDB075N15A-F085

Place of Origin:original

MOSFET Power Electronics FDB075N15A-F085 N-Channel MOSFET with Ultra-Low On-Resistance for Power Conversion Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ...

Brand Name:UCHI

Model Number:SGM2034

Place of Origin:Dongguan China

High Accuracy, Low Noise, Low Power LDO 1μA Ultra-Low Current Consumption AndLow Dropout CMOS Voltage Regulator The SGM2034 is an ultra-low current consumption, lowdropout voltage and high accuracy linear regulator. It iscapable of supplying 250mA output ...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Japan

...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are

Brand Name:Infineon

Model Number:IRF3205PbF

Place of Origin:Original Factory

IRF3205PbF HEXFET® Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage Power MOSFET with Trench/SGT Structure Process and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:STMicroelectronics

Model Number:STW25N80K5

Place of Origin:Original Factory

...Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...

Brand Name:INFINEON

Model Number:IRF3205PBF

Place of Origin:Germany

...Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low...

Brand Name:Infineon

Model Number:BSC010NE2LSI

Place of Origin:Malaysia

...Power MOSFET for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications: Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low...

Brand Name:JEUNKEI

Model Number:JY4P7M

Place of Origin:China

General Description: The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for ...

Categories:Amplifier IC Chip

Country/Region:china

Quick Details Model Number: NS4165 Type: integrated circuit Place of Origin: China Brand Name: Original Description: Ic Chip Voltage - Breakdown: 30V Frequency - Switching: 100MHz Power (Watts): 250W Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: ...

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

Brand Name:Hua Xuan Yang

Model Number:AP10N10DY

Place of Origin:ShenZhen China

...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Mosfet Power Transistor Features VDS = 100V,ID = 10A RDS(ON) <160mΩ @ VGS=10V (Typ:140mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:160mΩ) High density cell design for ultra low...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor IRFR024NTRPBF D-PAK N-Channel 55V 17A 45W Surface Mount RoHS Compliant Feature l Ultra Low...

Place of Origin:PHILIPPINE

Brand Name: Technologies AG

Model Number:SPW47N60C3

...Power Transistor Description: The SPW47N60C3 is a Cool MOS Power Transistor. Applications: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Specifications: Datasheets SPW47N60C3 Product Photos TO-247 Pkg Product Training Modules CoolMOS™ CP High Voltage MOSFETs...

Brand Name:Original Factory

Model Number:MSCSM120DHM31CTBL2NG

Place of Origin:CN

...Mosfet Array Automotive IGBT Modules MSCSM120DHM31CTBL2NG Automotive IGBT Modules MSCSM120DHM31CTBL2NG 310W Mosfet Array Transistors Product Description Of MSCSM120DHM31CTBL2NG MSCSM120DHM31CTBL2NG Baseless Si Diode Power Module features high blocking voltage, very low stray inductance, ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM120DHM31CTBL2NG Part Number MSCSM120DHM31CTBL2NG Power...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...