trench mosfet

Brand Name:AOS

Model Number:AON6403

Place of Origin:original

AON6403 MOSFET Power Electronics Advanced Trench MOSFET Technology 30V Package 8-DFN FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 21A (Ta), 85A (...

Brand Name:N-X-P Semiconductors

Model Number:PMCXB900UE

Place of Origin:USA

PMCXB900UE 20V complementary N/P-channel Trench MOSFET Manufacturer: Nexperia Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: DFN-1010-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel ...

Brand Name:Original Factory

Model Number:IMBF170R1K0M1

Place of Origin:CN

SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V​ Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling higher frequency. Specification Of ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NTTFS3D7N06HL

High Power MOSFET NTTFS3D7N06HL N-Channel Shielded Gate Power Trench® MOSFET 60V 103A 3.9mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:original

Model Number:NX7002AK,215

...Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET...

Model Number:FF55MR12W1M1HB70BPSA1

EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC The EasyDUAL module, featuring a CoolSiC Trench MOSFET and PressFIT technology with an integrated NTC temperature sensor, is designed for high-frequency switching applications. Its low inductive...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench ...

Brand Name:onsemi

Model Number:FDS4435BZ

MOSFET 30V.PCH POWER TRENCH MOSFET Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: P-Channel Number of ...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench ...

Brand Name:Fairchild Semiconductor

Model Number:FDS4835

Place of Origin:CHINA

FDS4835 Marking 4835 SOP8 Dual 30V P-Channel PowerTrench MOSFET Reel Package List Of Other Electronic Components In Stock TCS1CD6ABHH ST SN74HC10N TI CY7C1148KV18-400BZXC CYPRESS NJM2244M JRC PIC18F13K50T-I/SS MICROCHIP LM34919TL/NOPB NSC ATMEGA324PA-MU ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF3012

...MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Product Summery Features z Advanced high cell density Trench...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET...

Place of Origin:US

Brand Name:Original

Model Number:FGA25N120ANTD

Product Detail Packaging Tube Part Status Active IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery GENERAL DESCRIPTION The product utilizes the latest super trench processing techniques to achieve the high cell density and reduces the on-resistance with high ...

Brand Name:STMicroelectronics

Model Number:STP110N8F6

... on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a

Brand Name:CANYI

Model Number:AP70N03NF

Place of Origin:Guangdong, China

... or in other Switching application. General Features VDS = 30V ID =70A RDS(ON) < 5.5mΩ VGS=10V N-Channel Advanced Power MOSFET DFN5*6-8L N

Brand Name:AlphaandOmega Semiconductor

Model Number:AON7534

Place of Origin:China

AON7534 30V N-Channel MOSFET 10.5mandOmega; Rds(on) 60A Continuous DFN5x6-8L -55anddeg;C to +175anddeg;C AEC-Q101 andnbsp; General Description andbull; Trench Power MOSFET technology andbull; Very Low RDS(on) at 4.5VGS andbull; Low Gate Charge andbull; ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ...