transistor triac semiconductor

Brand Name:Original

Model Number:BT134-600E

Get Your Hands On The Best Quality Bt134-600e Discover The Ultimate Solution for Your Electronic Needs If you're searching for a reliable and durable semiconductor device, the Bt134-600e is your perfect choice. This device is designed to provide ...

Model Number:BT138-800E

...TRIACs from Fuxin Semiconductor, designed with high ability to withstand shock loading of large current and excellent commutation performance. These TRIACs are suitable for various AC power control applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.Product Attributes Brand: Fuxin Semiconductor...

Brand Name:Nexperia USA Inc.

Model Number:PBHV8540X,115

Place of Origin:CHINA

...BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a ...

Place of Origin:US

Brand Name:Original

Model Number:BT131

Product Detail Packaging Cut Tape (CT) Part Status Active Triac Type Logic - Sensitive Gate Voltage - Off State 600V Current - On State (It (RMS)) (Max) 1A Voltage - Gate Trigger (Vgt) (Max) 1.5V Current - Non Rep. Surge 50, 60Hz (Itsm) 12.5A, 13.8A ...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

Product Technical Specifications N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00....

Brand Name:ONSEMI

Model Number:MJ15025G

Place of Origin:Mexico

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...

Brand Name:ONSEMI

Model Number:MJ15025G

Place of Origin:Mexico

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...

Brand Name:Nexperia

Model Number:BC846B 1B

Place of Origin:CN

...1B NPN General purpose transistor SMD SOT23 discrete Semiconductors Features • Low Current (max. 100 Ma) • Low Voltage (max. 65 V). Applications • General Purpose Switching And Amplification. Description Npn Transistor In A Sot23 Plastic Package. Pnp...

Brand Name:QingZhu

Model Number:MYL1-510/10

Place of Origin:Xian,China

MYL1type lightning protection varistor overvoltage protection for transistors, diodes, semiconductor switching components Introduction MYL1 type lightning protection varistor is an electronic component used for lightning protection. Features Small size, ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:TO-92 A42

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack ...

Model Number:SS8550

Place of Origin:Malaysia

Brand Name:KAIGENG

SS8550 SOT-23 Electronic Components IC MCU Microcontroller Integrated Circuits SS8550 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...

Brand Name:UCHI

Model Number:OBV-53D

Place of Origin:Dongguan China

53D High Energy Varistor , Metal Oxide Varistor For Industrial And Consumer Electrical Equipment Part number code for “UCHI ” Sizes MAX d d-1(±0.1) A A-1 K D H 14D 16.5 21.0 　 0.8 　 7.5±1.0 ≦3.0 20D 21.0 26.0 　 1.0 　 10±1.0 ≦3.0 25D 26.0 31.0 　 1.0 　 10...

Place of Origin:Switzerland

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Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Brand Name:STMicroelectronics

Model Number:BTB04-600SL

Place of Origin:China

BTB04-600SL Triacs 4 Amp 600 Volt TO-220-3 Transistors DESCRIPTION TheBTB04-600SL4quadrantsTRIACisintended forgeneralpurposeapplicationswherehighsurge current capability is required, such as lighting, cordedpowertools,industrial. This TRIAC features a gate...

Brand Name:Infineon Technologies IR

Model Number:IRFS3207ZTRRPBF

MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel Product Range MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics ...

Brand Name:Infineon Technologies

Model Number:SAK-TC297TP-128F300N BC

Place of Origin:CN/MY/MX

..., amplification, or switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings:

Brand Name:JC

Model Number:OSPF7N60-

Place of Origin:Jiangxi, China

...Semiconductor Field Effect Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Avalanche energy tested Improved dv/dt capability,high ruggedness Metal Oxide Semiconductor Field Effect Transistor...

Model Number:BT137S-800F

Place of Origin:original

...semiconductor product thyristor bidirectional thyristor TRIAC Standard 800 V 8 A surface mount variant DPAK Products Description: Shenzhen Core Source Technology Co., LTD Due to the wide variety of electronic components we operate, . If you cannot find the required component in my store. just send the physical list (BOM) Send inquiry to us Product Type Semiconductor...

Brand Name:original

Model Number:IRF431

Place of Origin:original

IRF431 MOSFET Transistors Discrete Semiconductors original in stock FEATURES ◆Low. Rps{on) at hlgh voltage ●lmproved inductive ruggednBss ●Excellent hlgh voltage stabllity ●Fast swluching tlmes ●Rugged palysllcon gBte cell structure ■Lqw input capacitance...