tk13a60d field emission transistor

Brand Name:JC

Model Number:OSPF2N60

Place of Origin:Jiangxi, China

...Input Impedance N Channel Transistor , Field Emission Transistor 600V N Channel Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness N Channel Transistor Applications High efficiency...

Brand Name:TOSHIBA

Model Number:TK13A60D

Place of Origin:Original

TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate ...

Brand Name:Hua Xuan Yang

Model Number:3403D-U-V

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%

Brand Name:Infineon Technologies IR

Model Number:IRFS3207ZTRRPBF

MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel Product Range MOSFET Transistors Field Effect Transistor Discrete Semiconductors IRFS3207ZTRRPBF N Channel MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics ...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:KYKY

Model Number:EM8010

Place of Origin:China

...field emission scanning electron microscope is positioned as an economical Schottky thermal field emission scanning electron microscope with rich extensibility and high cost performance, which is widely used in various fields such as materials science, biology, medicine, chemistry, and environmental science. Advantages: ◆ Schottky field emission...

Brand Name:original

Model Number:WSF28N06

Place of Origin:Guangdong, China

.... It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C

Brand Name:ANTERWELL

Model Number:2SK3797

Place of Origin:Malaysia

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High ...

Brand Name:CNOEC, OPTO-EDU

Model Number:A63.7040

Place of Origin:China

... 1～2000000x 1～2000000x Electron Gun Schottky Thermal Field Emission Gun Schottky Thermal Field Emission Gun Probe Current 1pA~40nA 1pA~40nA Field of View 6mm 6mm Dwell Time 20ns 20ns Beam Deflection -- Dual Beam Deflection System: Electromagnetic &

Place of Origin:MALAYSIA

Brand Name:MOT

Model Number:MRF21090

MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...Field Effect Transistor Transistor Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Pocket Transistor...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...

Brand Name:Original Factory

Model Number:AFGHL40T65SPD

Place of Origin:CN

238W Automobile Chips AFGHL40T65SPD IGBT Trench Field Stop Transistors TO-247-3​ Product Description Of AFGHL40T65SPD AFGHL40T65SPD IGBT Trench Field Stop Transistors - 238W Single IGBTs Transistors, package is TO-247-3​, Transient Gate−To−Emitter ...

Model Number:NDT452AP

Place of Origin:original factory

NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density ...

Brand Name:Julun

Model Number:PG-TO 220

Place of Origin:CHINA

800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ...

Place of Origin:Original and New

Brand Name:CJ/Changdian

Model Number:CJL2019 SOT-23

Integrated Circuits IC Original and New,CJL2019 SOT-23 N-channel 5A20V Field Effect Transistor CJ/Changjing Original [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including ...

Brand Name:SAIKELI

Model Number:IRF7314TRPBF

Place of Origin:China

IRF7314TRPBF SOP-8 Two P-channel 20V 5.3A field effect transistors (MOSFETs) Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs...

Brand Name:Liocrebif

Model Number:LKF-PINFET

Place of Origin:China

... Introduction As the optical information receiver of optical receiver system, PINFET (P-Intrinsic-N Field-Effect Transistor) acts as voltage amplified optoelectronic converter. Specification Parameters, such as linearity response, minimum linear optical...

Brand Name:Renesas

Model Number:UPA2738GR-E2-AT

Place of Origin:Shenzhen, China

Electronic Components Power Field-Effect Transistors UPA2738GR-E2-AT Integrated Circuits Features : VDSS = −30 V (TA = 25°C). Low on-state resistance. - RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A). 4.5 V Gate-drive available. Small and surface mount ...

Brand Name:FAIRCHILD

Model Number:FDB2614

Place of Origin:China

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip PRODUCT DESCRIPTION Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading distributors of electronic products, we carry man...