template gan epi wafer

Brand Name:ZMSH

Model Number:2inch GaN-ON-sapphire GaN Template

Place of Origin:CHINA

...) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um;

Brand Name:zmkj

Model Number:GaN-FS-C-U-C50-SSP

Place of Origin:CHINA

...GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN...

Brand Name:HMT

Model Number:4 inch

Place of Origin:China

... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC ...

Brand Name:PAM-XIAMEN

Place of Origin:China

...GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our ...

Brand Name:STARLAND

Model Number:XT-28

Place of Origin:Guangdong guangzhou

Wafer Tube Production Equipment , Fully Automatic 28 Baking Templates , Stainless Steel Material . Wafer barrel production equipment One Motor drives all. One single motor synchronize the oven, batter pump and molds open & close actions using track and roller system. Easy to operate and maintain with a reliable production. Cone Ejection. Smooth cone ejection action by track and roller system. The hammer system ensure the wafer...

Brand Name:BonTek

Model Number:Sapphire (Al2O3)

Place of Origin:China

8 Inch Dia 200mm Sapphire Wafer By 1.0mm Thickness 1sp For Epi - Ready Carrier Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains...

Place of Origin:China

...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and

Brand Name:OEM

Place of Origin:CHINA

...ensure the production of wafers is more healthy and hygienic. 3. The baking sheet template of the production line is made of gas-fired cast iron, which is fast heating and non-stick mold. 4. The output is large, and 150,000 wafers can be made in one day,

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ...

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:Crystro

Model Number:CR210330-4

Place of Origin:China

... as a substrate for the growth of other carnet crystals. Crystro manufactures gadolinium gallium garnet in forms such as single crystals, ingots, boules, wafers in both standard and custom dimensions. We offer both polished (single or double sided) and

Categories:Biodegradable Dog Poop Bags

Country/Region:china

Product Description Name Hot Selling Fun Disposable Degradable Poop Dog Bags with Dispenser Leak-Proof Pet Waste Bags Surface PO or PE and degradable. Dimension 33-38mm,15pcs/roll Plastic Bag Size 230X330MM Thickness 20 micron or can be customized Printing...

Place of Origin:Tianjin, China

Model Number:MY-01

Brand Name:OEM

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Brand Name:CAEC

Place of Origin:Henan, China

..., corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer. Application ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for