surface amount high voltage mosfet

Brand Name:Lingxun

Place of Origin:China

Model Number:CS4N65A5

...Max. Typ MAX Typ Typ CS4N65A5 TO-252 N 4 650 ±30 2 4 2220 2570 Product Description: Our MOSFET uses advanced technology to ensure maximum efficiency, making it an ideal choice for solar and welding machine applications. With a gate-source voltage (Vgs) of

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

.... This type of MOSFET is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power supply. High Voltage MOSFETs are designed for superior performance, with advanced thermal management and

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss...

Brand Name:Infineon Technologies

Model Number:IRF6648TRPBF

Place of Origin:Multi-origin

... Body Diode for Improved Switching Performance 6. Very Low On-Resistance for Minimized Conduction Loss 7. Fast Switching Speed for Improved System Efficiency 8. High Maximum Drain-Source Voltage for

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Place of Origin:America

Brand Name:IXYS

Model Number:MDD21-04N1B

MDD21-04N1B is a SUPERmini. SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE. Part NO: MDD21-04N1B Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands ...

Brand Name:ZMSH

Place of Origin:China

Product Overview of 4H-SiC epitaxial wafers The rapid development of electric vehicles, smart grids, renewable energy, and high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities...

Place of Origin:United States

Model Number:SY7201ABC Silergy SOT 23

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Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:UCHI

Model Number:SGM8271/8272/8274

Place of Origin:Dongguan China

High Voltage Rail-to-RailOutput Operational Amplifiers Integrated Circuit IC The SGM8271 (single), SGM8272 (dual) and SGM8274(quad) are high voltage operational amplifiers, whichcan operate from 4.5V to 36V single supply or from±2.25V to ±18V dual power ...

Brand Name:Infineon

Model Number:IRLML2803TRPBF

Place of Origin:CHINA

IRLML2803TRPBF Infineon Trans MOSFET N-CH Si 30V 1.2A 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process ...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:XIWUER

Model Number:CT8-2-27KV-82.55PF

Place of Origin:XIAN, CHINA

... - blasted surface with Rz≥40um. This treatment thoroughly cleans the surface, removing impurities and creating a sleek, uniform appearance. It also enhances heat dissipation. The increased surface area from sand - blasting allows heat to dissipate more

Brand Name:JUYI

Place of Origin:China

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage