super junction mosfet n channel

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

N Type Super Junction Metal Oxide Field Effect Transistor with Ultra Small Internal Resistance *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

Place of Origin:CHINA

...MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction...

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Original Factory

Model Number:NVHL050N65S3HF

Place of Origin:CN

...Channel MOSFETs Transistors TO-247-3​ Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NVHL050N65S3HF Part Number NVHL050N65S3HF Series Automotive, AEC-Q101, SuperFET® III FET Type N-Channel Technology MOSFET...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Hua Xuan Yang

Model Number:HXY4409

Place of Origin:ShenZhen China

... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction

Brand Name:Infineon Technologies

Model Number:IRF9321TRPBF

Place of Origin:original

...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-state resistance. This

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:RS3A THRU RS3M

RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement ...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery GENERAL DESCRIPTION The product utilizes the latest super trench processing techniques to achieve the high cell density and reduces the on-resistance with high ...

Brand Name:DIODES

Model Number:2N7002DW-7-F

Place of Origin:CHINA

...MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.21.00.95 Automotive No PPAP No Product Category Small Signal Configuration Dual Channel Mode Enhancement Channel Type N Number of Elements per Chip 2 Maximum Drain Source Voltage (V) 60 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 2 Operating Junction...

Brand Name:Infineon

Model Number:IRFR540ZTRPBF

Place of Origin:CHINA

IRFR540ZTRPBF 1.Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free 2.Description This HEXFET® Power MOSFET utilizes the latestprocessing ...

Brand Name:Original

Model Number:LN2302BLT1G

Place of Origin:China

... RDS(ON) 3. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 4. N-channel 20V 2.8A Technological Parameters: Drain-source resistance 0.085 Ω polarity N

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Malaysia

.../95/EC Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C

Place of Origin:MALAYSIA

Brand Name:Standard Brand

Model Number:APT77N60JC3

APT77N60JC3 is a Super Junction MOSFET Why Chose Mega Source ? Quality At the heart of Mega Source Elec. lies a commitment to total customer satisfaction with a secure quality system .With ...

Categories:Onsemi Ic

Country/Region:china

...Function: Single N-Channel Power MOSFET Drain-Source Breakdown Voltage: 100V Continuous Drain Current: 10A On-Resistance: 10mΩ (typ) Operating Junction Temperature: -40°C to 150°C Package: SO-8 The NCP1060AD100R2G is an N-channel power MOSFET from ON ...

Brand Name:IXYS

Model Number:IXTH200N10T

Place of Origin:Original Factory

...MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction...