stac1011 350 mosfet transistor

Place of Origin:Original

STAC1011-350 Specifications Part Status Active Transistor Type LDMOS Frequency 1.03GHz ~ 1.09GHz Gain 15dB Voltage - Test 36V Current Rating - Noise Figure - Current - Test 150mA Power - Output 350W Voltage - Rated 80V Package / Case STAC265B Supplier Device Package STAC265B Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. STAC1011-350...

Categories:RF MOSFET Transistors

Country/Region:china

... Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Brand Name:SEMIKRON

Model Number:SKKT460/22E

Place of Origin:Germany

...SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power control in demanding industrial applications. ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.03GHz ~ 1.09GHz 15dB 350W STAC265B

Model Number:STAC1011-350

RF Mosfet 36 V 150 mA 1.03GHz ~ 1.09GHz 15dB 350W STAC265B

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original

Model Number:STD12N10L

... with STD12N10L MOSFET Transistors Pros and Cons of using STD12N10L MOSFET Transistors As a seeker of powerful performance from your electronic devices, you’ve likely come across the STD12N10L MOSFET Transistors. These transistor components are renowned...

Brand Name:Original Factory

Model Number:AIMBG120R020M1

Place of Origin:CN

...Mosfet Transistors for Automotive Description of AIMBG120R020M1 The AIMBG120R020M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles. Specification Of AIMBG120R020M1 Ciss 2281 pF Coss 123 pF ID (@25°C) max 81 A Operating Temperature min max -55 °C 175 °C Ptot (@ TA=25°C) max 350...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

Mos Audio Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol ...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...