stable mosfet low gate threshold voltage

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage MOSFET with Trench Process Advantages for Synchronous Rectification in Both Series and Parallel Configuration *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-...

Brand Name:IXYS

Model Number:IXTQ130N10T

Place of Origin:original

...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in

Brand Name:Original

Model Number:UCC27524ADR

Place of Origin:Original

...-Drive Current • Independent-Enable Function for Each Output • TTL and CMOS Compatible Logic Threshold Independent of Supply Voltage • Hysteretic-Logic Thresholds for High Noise Immunity • Ability to Handle Negative Voltages (–5 V) at Inputs •

Brand Name:ZETEX

Model Number:ZXMP6A13FTA

Place of Origin:Original

... 60V P-CHANNEL ENHANCEMENT MODE MOSFET low power mosfet SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low...

Brand Name:Original brand

Model Number:BSZ037N06LS5ATMA1

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249...

Brand Name:STMicroelectronics

Model Number:STW25N80K5

Place of Origin:Original Factory

...MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD417

Place of Origin:CHINA

...low gate charge and low gate resistance. With the excellent thermal resistanceof the DPAK package, this device is well suited forhigh current load applications. FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous ...

Model Number:IRFL4315TRPBF

...MOSFET Drain-Source Breakdown Voltage 150 V Descriptions of Aviation Parts: MOSFT 150V 2.6A 185mOhm 19nC Features of Aviation Parts: Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage process and common-mode noise canceling technique provide stable

Brand Name:Infineon

Model Number:IRFB7545PBF

Place of Origin:CHINA

...Product Category Power MOSFET Configuration Single Process Technology HEXFET Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 60 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V)

Brand Name:JUYI

Place of Origin:China

...MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1.5 V

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:Microchip

Model Number:Onsemi

...MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:Original Factory

Model Number:SCTWA60N120G2-4

Place of Origin:CN

...MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specification Of SCTWA60N120G2-4 Part Number SCTWA60N120G2-4 Vgs - Gate-Source Voltage: - 10 V, + 22 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

...Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 400 Maximum Gate Source Voltage (V) ±30 Maximum Gate Threshold Voltage...

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

...MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source breakdown voltage: 30 V Id-continuous drain current: 100 mA Rds On-drain-source on-resistance: 7 Ohms Vgs - gate-source voltage: - 20 V, + 20 V Vgs th-gate-source threshold voltage: 1.5 V Qg-gate