silicon rf power mosfet 20w

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Model Number:D2010UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF151G

MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:ONSEMI

Model Number:MMBTA43LT1G

Place of Origin:Original

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, making it a reliable and stable product. This product is suitable for many applications such as switch mode power supplies, motor drives, and power...

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 RT2528L RALNK RT5501WSC RICHTEK 　 IRG4RC20FTR IR RF071M2STR ROHM...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ...

Model Number:FQP30N06

Place of Origin:United States

Brand Name:Original

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Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:VBE

Place of Origin:CHINA

... solution for applications requiring accurate, low-noise amplification. This module offers excellent RF performance with a wide gain range of 30 to 40dB, gain flatness of ≤±0.5dB, noise figure of 2.5dB, VSWR of 1.5:1 and group delay of ≤...

Place of Origin:China

Brand Name:HuaNuo

Model Number:HN-PA20W_550

HN-PA20W_550:550MHz COFDM 20W RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment ...

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

... MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET ...

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...

Place of Origin:CHINA

Brand Name:EST

Model Number:LTE20W-B1

20W RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF

Brand Name:Silicon Labs

Model Number:SI4355-B1A-FMR

Place of Origin:Multi-origin

... RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • RoHS Compliant Specifications: • Frequency Range: 400 MHz - 2.7 GHz • Output Power: >20W...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:TeXin ,OEM

Model Number:TX-5.8RFPA

Place of Origin:China

...20W 40W 50W 100W 5.8G RF Power Amplifier Module for Anti Drone RF Jammer Descriptions: 1.This high output power and high gain power RF amplifier can be widely used for drone countermeasure devices and systems. It can support blocking 5.8G band, the output power is up to 50W , very long range interference effect . 2.5W,10W,20W,30W,40W,50W,100W,200W output power can be chose, which are available. 4. RF power...

Brand Name:Charter Leader

Model Number:CLP-2-8-2Way PD

Place of Origin:China

... Range 2～8GHz Amplitude Balance ≤±2° VSWR ≤1.35:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.0dB(not Include Theory 3dB) Power Handling 20W Isolation ≥18dB Temperature Range -40℃～+70℃