silicon n channel mosfet triode

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? 100% ...

Brand Name:Vishay Siliconix

Model Number:IRFBE30PBF

Place of Origin:original

IRFBE30PBF MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material ​ Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:IOR

Model Number:IRF3205PBF

Place of Origin:CHINA

...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Lingxun

Model Number:LX3205A1

Place of Origin:China

...Silicon Low Power MOSFET TO-220AB Package For Digital Logic Circuits Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LX3205A1 TO-220AB 1 N 110 55 ±20 2 4 7.5 9 10 15 - - Product Description: One of the most notable attributes of this MOSFET...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF6012

QM4803D​ N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The ...

Brand Name:Infineon

Model Number:IRFS4227TRLPBF

Place of Origin:Original

...Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon...

Brand Name:original

Model Number:IRLML6401TRPBF

...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, making it a ...

Place of Origin:US

Brand Name:Original

Model Number:2SK1530/2SJ201

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and

Brand Name:PHILIPS

Model Number:BF981

Place of Origin:Netherland

Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ...

Model Number:13007

Place of Origin:United States

Brand Name:Original

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Brand Name:Infineon Technologies

Model Number:IMZ120R090M1H

Place of Origin:United States

... (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (...

Brand Name:Infineon

Model Number:IRF4905PBF

Place of Origin:China

...Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute ...

Brand Name:IR

Model Number:IRFB4227PBF

Place of Origin:IR

...MOSFET Transistor N Channel High Current Triode IRFB4227PBF Direct-plug to-220 N-channel 200V/65A MOSFET high current triode Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...