silicon low power mosfet transistors

Brand Name:Lingxun

Place of Origin:China

Model Number:LT200N03AD

Multiscene Low Voltage MOSFET For 5G Base Station Low Power Transistor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ...

Brand Name:Standar

Model Number:BCX6925TA

Place of Origin:China

Silicon Planar Power Mosfet Transistors / Electronics Component Transistor FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH ABSOLUTE MAXIMUM RATINGS. Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power...

Brand Name:Original Factory

Model Number:MSC040SMA120B

Place of Origin:CN

... switching speed due to low internal gate resistance. Specification Of MSC040SMA120B Part Number MSC040SMA120B Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V Power Dissipation (Max) 323W (Tc) Benefits Of

Brand Name:Standar

Model Number:AS1360-33-T

Place of Origin:Malaysia

1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas...

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power dissipation: 130W Feature Advanced Process Technology Ultra Low...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PRF6P21190H

PRF6P21190H is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2 . Part NO: PRF6P21190H Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel ...

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 RT2528L RALNK RT5501WSC RICHTEK 　 IRG4RC20FTR IR RF071M2STR ROHM...

Model Number:MBRF30100CT

Place of Origin:United States

Brand Name:Original

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Model Number:VRF2933

Place of Origin:Malaysia

Brand Name:KAIGENG

VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...

Model Number:MAX483ESA

Place of Origin:china

Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has