silicon loss low rds on mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage...

Brand Name:onsemi

Model Number:KSD1408YTU

Place of Origin:China

...MOSFET 100A Current 3.8mandOmega; Low Rds(on) Fast Switching High Efficiency 150anddeg;C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free andamp; RoHS Compliant andnbsp; Features 1:Ultra-Low On-Resistance (3.8mandOmega;): Minimizes conduction losses...

Brand Name:Infineon Technologies

Model Number:IRFR120NTRLPBF

Place of Origin:Multi-origin

This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include: • Drain-Source Voltage: 60V • Continuous Drain Current: -11A • Power ...

Brand Name:Hua Xuan Yang

Model Number:AP25N10X

Place of Origin:ShenZhen China

... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ

Brand Name:Ti

Model Number:FDMS6681Z

... combination for low rDS(on) HBM ESD Protection Level of 8kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW...

Brand Name:Original Factory

Model Number:DMT47M2SFVWQ

Place of Origin:CN

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate ...

Brand Name:Original brand

Model Number:NTMFS4C029NT1G

Place of Origin:China

...MOSFET N-CH 30V 15A SO-FL T/R NTMFS4C029NT1G New Parts Transistors Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Product Specifications Product name Transistors Type NTMFS4C029NT1G Brand Brand New Color NTMFS4C029 Function N-Channel Transistors Usage MOSFETs...

Brand Name:original

Model Number:NTMD4840NR2G

Place of Origin:original

...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual SOIC−8 Surface Mount Package Saves Board Space • This is a Pb−Free Device Applications • Disk Drives • DC−DC Converters • Printers Product Category: MOSFET...

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

... N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More ...

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

... • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Brand Name:ON Semiconductor

Model Number:NTMFS4C05NT1G

Place of Origin:Shenzhen,China

...IC Electronic Components MOSFET 78 A SMD 1 Channel 55 C Product description • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses Product details/Parameters ...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

...MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS...

Brand Name:original

Model Number:IRLML6401TRPBF

...MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V Low...

Categories:Onsemi Ic

Country/Region:china

...MOSFET Breakdown Voltage: 30V Continuous Drain Current: 3.315A (each) On-Resistance: 2Ω (typ per FET) Package: PowerSO-8 The MC33152VDR2G is a dual N-channel MOSFET power switch from ON Semiconductor. Key Features: Integrates two independent 3.315A N-Channel MOSFETs Low RDS(on) of 2Ω combined minimizes conduction losses...

Brand Name:Diodes Incorporated

Model Number:DMP6050SFG-13

Place of Origin:USA

...MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters Features and Benefits  Low RDS(ON) – Ensures On State Losses...