silicon gate rf power vdmos transistor

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRF422

MRF422 is a RF POWER TRANSISTORS NPN SILICON. Part NO: MRF422 Brand: MOTOROLA Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:ONSEMI

Model Number:MMBTA43LT1G

Place of Origin:Original

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & ...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ...

Brand Name:Intel

Model Number:EPM7256AEQC208-10

Place of Origin:Multi-origin

...-10 RF Power Transistor Product Features: - N-Channel Enhancement Mode - Self-Aligned Silicon Gate - High Performance - Low On-Resistance Technical Specifications: - Maximum Power Dissipation: 2.8W - Maximum Drain Source Voltage: 20V - Maximum Gate Source ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power

Brand Name:Original Factory

Model Number:SCTWA60N120G2-4

Place of Origin:CN

...Silicon carbide Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specification Of SCTWA60N120G2-4 Part Number SCTWA60N120G2-4 Vgs - Gate-Source Voltage: - 10 V, + 22 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

... (sat) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector power dissipation (Tc = 25°C) PC 130 W

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic Mor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Silicon Carbide Low On Resistance Field Effect Transistor for UPS Power Supply Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-frequency operation, low gate charge and fast switching speed, making it ideal for use in power...

Place of Origin:Original

SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2 Ohm @ 10mA, 4V Vgs(th) (...

Brand Name:Lingxun

Model Number:CS50N20A6

Place of Origin:China

50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ ...