sic mosfet igbt 6n channel

Brand Name:Original Factory

Model Number:FS03MR12A6MA1BBPSA1

Place of Origin:CN

IGBT Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge Detailed Description Of FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles.The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Product Attributes Of FS03MR12A6MA1BBPSA1 Part Number: FS03MR12A6MA1BBPSA1 FET Type: 6 N-Channel...

Brand Name:Shareway

Model Number:750319331

Place of Origin:Guangdong China

... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVTFS4C02N

...MOSFET NVTFS4C02N MOSFET Single N-Channel Power N-Channel µ8FL 30V 162A 2.25 mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT...

Brand Name:JUYI

Model Number:JY213H

Place of Origin:China

...h three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection...

Brand Name:Anterwell

Model Number:ISL9V3040S3ST

Place of Origin:original factory

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

Descriptions: The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown...

Brand Name:Cersol

Place of Origin:China

Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ...

Brand Name:Infineon Technologies

Model Number:IMBG120R350M1HXTMA1

... Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The ...

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC...

Brand Name:WINNER

Model Number:WNE T6

Place of Origin:CHINA

Top Grade Aluminum Alloy Bonding Wire 6N High Purity for Reliable Packaging of Power Semiconductors like MOSFET IGBT etc * Our high quality welding wire is meticulously crafted from 6N high purity aluminum material. This top grade aluminum forms the core...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate ...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

Quick Detail: N-CHANNEL SILICON POWER MOSFET Description: N-CHANNEL SILICON POWER MOSFET Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Applications: Maintains both low power loss and low noise Lower RDS(on) characteristic More ...

Brand Name:Power Integrations

Model Number:2SC0435T2G1-17

Place of Origin:TH

Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes...

Model Number:IR2130STRPBF

Brand Name:Original

Place of Origin:US

... Packaging Tape & Reel (TR) Part Status Active Driven Configuration Half-Bridge Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source...

Brand Name:Infineon Technologies

Model Number:IPB044N15N5ATMA1

Place of Origin:Germany

... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id -

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:Infineon Technologies

Model Number:IR2104STRPBF

Place of Origin:Multi-origin

... MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive a wide range of power devices from low side referenced N-channel MOSFETs and IGBTs to high side referenced P-channel MOSFETs. Features: •Extended output...