sic mosfet high voltage device

Brand Name:Lingxun

Place of Origin:China

Durability Silicon Carbide MOSFET High Voltage Device For Electronics Tool *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

..., and are made of a unique material. SiC MOSFETs are widely used in a variety of applications, such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power supplies, and charging piles. These devices feature a

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:Infineon Technologies

Model Number:IRFB4310ZPBF

Place of Origin:Mult-origin

Product Listing: IRFB4310ZPBF - N-Channel MOSFET Parameters: • Drain-Source Voltage (Vdss): 400V • Drain-Source On-Resistance (Rds): 0.018Ω • Current - Continuous Drain (Id): 90A • Power - Dissipation (Pd): 125W • Threshold Voltage (Vgs): 4V • Gate-Source ...

Brand Name:PANJIT

Model Number:ER1004FCT

Place of Origin:Original

...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • Super fast recovery times, high voltage. • Pb free product are

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:FR301 THRU FR307

FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Fast switching for high efficiency Low reverse leakage ...

Brand Name:DOWE

Model Number:CG5-24Q/110*210

Place of Origin:China

Products Description High Voltage Device Sensor The variety of high voltage insulator listed in sample all adopt epoxy vacuum pouring technology for one-time molding, kinds of bushing,contact box,insulating cylinder and bell housing etc adopt APG ...

Brand Name:METS

Precision Deep-Drawn Metal Shells with Ceramic Insulators | Custom Nickel-Plated Stainless Steel Housings for Electronic Sensors, RF Connectors, and High-Voltage Devices Product Description: Our Precision Deep-Drawn Metal Shells with Ceramic Insulators...

Brand Name:VDR

Model Number:10D511K

Place of Origin:CHINA

*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}p[style^="text-align"] img{display:inline-block}input, button, textarea, select {font: inherit;}p, h1, h2, ...

Brand Name:ZMSH

Model Number:6Inch SiC Epitaxial Wafer

Place of Origin:CHINA

...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high...

Brand Name:Shareway

Model Number:750319331

Place of Origin:Guangdong China

... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range input voltages 6 V to

Brand Name:Original Factory

Model Number:MSCSM170HM23CT3AG

Place of Origin:CN

...Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W ​ Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification Of MSCSM170HM23CT3AG Part Number MSCSM170HM23CT3AG Technology Silicon Carbide (SiC) Configuration 4 N-Channel (Full Bridge) Drain to Source Voltage...

Brand Name:ZMSH

Place of Origin:China

...SiC epitaxial wafers The rapid development of electric vehicles, smart grids, renewable energy, and high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities, and improved efficiency. Among wide bandgap semiconductors, silicon carbide (SiC) has emerged as the material of choice due to its wide bandgap, high...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...SiC Resistance High Temperature Heating Element Double Helix Type General Description Production Process: made into blank, silicided under high temperature and re-crystallized. Character: high-applied temperature, anti-oxidization, anti-corrosion, long service life, little deformation, easy installation and maintenance. Usage: used in various high temperature electric furnaces and other electric heating devices...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:MEASTEK

Model Number:MDP4150B

Place of Origin:SHENZHEN

...High Voltage Differential Probe, ±1500V Ultra High Voltage Measurement with 1% High Accuracy Low Loading Effect 1. Ultra-high voltage measurement capability Supports ±1500V peak differential voltage and ±1500V common mode voltage , meeting the test requirements of high-voltage devices such as IGBT and MOSFET...

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The