sic mos to 220ac

Brand Name:SICC

Model Number:4h-n

Place of Origin:CHINA

... substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of

Brand Name:ZMKJ

Model Number:6inch 4h-n sic wafers

Place of Origin:CHINA

4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut ...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:Ruideer

Model Number:400*400*1500/500*500*1800mm

Place of Origin:Zhuzhou City, Hunan Province,China

...Sic Carbide Features and Benefits: High Temperature Vacuum Sintering Furnace is used in Sm-Co, AlNiCo, metal mesh, cemented carbide, ceramic materials, photoelectric coating materials, graphite purification, magnet material and rare refractory metals, alloys (tungsten, Mo...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range...

Model Number:C3M0016120K

Place of Origin:original

Brand Name:original

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Brand Name:HMD

Model Number:NONE

Place of Origin:CHN

...: With good working quality, suitable for rolling . With good working quality, suitable for punching Description Mo. Content% Density g/cm3 Applications/properties Dia mm Mo. Bars High pure bars Mo. > 99 > 9.3 Pure Mo. Bar for drawing conventional Mo.

Categories:Stmicroelectronics Products

Country/Region:china

...: Schottky Silicon Carbide Diodes Mounting Style: Through Hole Package / Case: TO-220AC-2 Configuration: Single Technology: SiC If - Forward Current: 8 A Vrrm - Repetitive Reverse Voltage: 650 V Vf - Forward Voltage: 1.75 V Ifsm - Forward Surge Current: ...

Place of Origin:Zhengzhou ,China

Brand Name:Rongsheng

Model Number:AZM-1550/1650/1680

... High quality silicon mo brick for cement kiln 1. Thermal shock resistance; 2. high strength; 3. good wear resistance. Silica Mullite Brick Product AZM-1550 AZM-1650 AZM-1680 Index Index Index Index chemical composition SiC+SiO2 ≥35 ≥30 ≥...

Brand Name:Brother Furnace

Model Number:BR-NT/ST/MT / XD-NT/ST/MT

Place of Origin:China

.... Mainly used for labs of the university, research center, and production enterprise, etc. Max temperature: 1200℃ (HRE Fe-Cr-Al-Mo wire) 1400℃ (SiC Heater) 1600℃

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

...to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * High reliability, high durability module. * High thermal fatigue durability (Al-SiC base plate.) (delta Tc=70°C, N>30,000cycles) Specifications: part no. MBM50F12 ...