si doped gallium arsenide substrates

Brand Name:zmsh

Model Number:GaAs-2inch-N-type

Place of Origin:china

...Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide substrates -------------------------------------------------------------------------------------------------------------- GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium...

Brand Name:PAM-XIAMEN

Place of Origin:China

... crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-...

Brand Name:zmkj

Model Number:GaAs-N-4inch

Place of Origin:CHINA

VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, -------------------------------------------------------------------------------------------------------------- (GaAs) Gallium ...

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and

Brand Name:Infi

Model Number:BDD

Place of Origin:Hunan, China

Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate Color Black Shape square, rectangle, round etc thickness 0.3mm-0.8mm Usage ...

Brand Name:Infi

Model Number:BDD

Place of Origin:Hunan, China

Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate Color Black Shape square, rectangle, round etc thickness 0.3mm-0.8mm Usage ...

Brand Name:HMT

Model Number:6 inch

Place of Origin:CHINA

SI type SiC ingot manufacturer sell semi-insulating sic wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices. By growing gan epitaxy layer on semi-insulating silicon carbide substrate...

Brand Name:Crystro

Model Number:CR201204-01

Place of Origin:China

Polished surface Si silicon single crystal Black amorphous silicon is obtained by the reduction of sand (SiO2) with carbon. Ultra-pure crystals if silicon have a blue-grey metallic sheen. Bulk silicon is un-reactive towards oxygen, water and acids (except ...

Brand Name:ALLIN Solar Power System

Model Number:AY-ZD03-2000W

Place of Origin:Shijiazhuang Hebei China

... silicon, gallium arsenide, selenium, indium copper, etc.N-type silicon can be obtained by doping P- type silicon and forming P-N junction.Crystalline silicon is the basic battery material.Solar cells made of crystalline silicon materials mainly ...

Brand Name:Perfect Laser

Model Number:PE-20W/50W

Place of Origin:China

... 50W Solar cell fiber cutting machine mainly used for metal and silicon, germanium, gallium arsenide and other semiconductor material substrate scribing and cutting, machinable solar panels, silicon, ceramic , aluminum foil, etc., Artifacts refinement and

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with ...

Place of Origin:China

...Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN...