N-Type / Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
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32inch InAs wafers N-type un-doped type GaAs wafers GaSb Wafers Application InAs single crystal can be used as substrate material to grow InAsSb/InAsPSb, InNAsSb and other heterojunction materials, and the production wavelength is 2~14 μ M infrared light ......
SHANGHAI FAMOUS TRADE CO.,LTD
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P Type , GaAs Wafer With Low Etch Pit Density , 2”, Prime Grade , Epi Ready
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... used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth
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VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity mor......
SHANGHAI FAMOUS TRADE CO.,LTD
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No Doped COC Czochralski 0.5mm Si Single Crystal Silicon Wafer
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Polished surface Si silicon single crystal Black amorphous silicon is obtained by the reduction of sand (SiO2) with carbon. Ultra-pure crystals if silicon have a blue-grey metallic sheen. Bulk silicon is un-reactive towards oxygen, water and acids (except ......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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M10 Wafer Solar Panel For Ultra Large Power Plant Superior Module 555W 144 Half Cell
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...wafer Solar Panel for ultra-large power plant or distributed projects superior module efficiency 555W 144 half cell MONO-FACIAL MODULE P-Type /Positive power tolerance of 0~+3%/Max module efficiency 21.48% 1. Suitable for ground power plantsand distributed projects 2. Advanced module technology deliverssuperior module efficiency Gallium-doped Wafer......
Beijing MITSCN Co., Ltd.
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