UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
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...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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BUV21G - ON Semiconductor - SWITCHMODE Series NPN Silicon Power Transistor
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Quick Detail: SWITCHMODE Series NPN Silicon Power Transistor Description: This device is designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS Applications: • High DC Current ......
Mega Source Elec.Limited
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation
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... IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power ......
Shenzhen Sai Collie Technology Co., Ltd.
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H20R1203 IGBT H20R1203 Transistor H20R120 H30R1602 H30R1353 H25R1202 FGA25N120 Induction Cooker Power Tube TO-247
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... (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on...
Shenzhen Quanyuantong Electronics Co., Ltd.
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FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors
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...Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number FS300R17OE4B81BPSA1 Input Capacitance (Cies) @ Vce 24.3 nF @ 25 V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Features Of Automotive IGBT...
ShenZhen Mingjiada Electronics Co.,Ltd.
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