GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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IGBT Power Module MBM50F12 - TOSHIBA - Silicon N-channel IGBT
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Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ......
Mega Source Elec.Limited
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TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board
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TPC8020-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board · Small footprint due to small and thin package · High-speed switching · Small gate charge: Qg = 23 nC (......
Anterwell Technology Ltd.
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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET
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TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS......
ChongMing Group (HK) Int'l Co., Ltd
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Transistor RJP30E2 Silicon N Channel IGBT LCD IC Chip TO-3P
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Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W
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Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W Product Description Of MSC100SM70JCU3 MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper 700 V, 124 A full Silicon Carbide (SiC) power module. ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
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IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12 Infineon Technologies 1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Dua Channel IGBT Driver SCALETM-2 IGBT And MOSFET Driver Core IGBT Transistor
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Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes......
Shenzhen Hongxinwei Technology Co., Ltd
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TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS
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TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS......
Shenzhen Retechip Electronics Co., Ltd
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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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