STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
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... 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of ......
ChongMing Group (HK) Int'l Co., Ltd
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IRF740 N - CHANNEL TO-220 Power MOSFET dual power mosfet
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STOCK List PM200RSA060 120 MITSUBISH 13+ MOUDLE MSM5219BGS-K-7 550 OKI 14+ QFP PS11003-C 500 MITSUBISH 12+ MODULE MB87020PF-G-BND 3531 FUJITSU 14+ QFP MA2820 7689 SHINDENG 16+ ZIP 7MBP150RTB060 210 FUJI 12+ MODULE MBM200HS6B 629 HITACHI 14+ MODULE ......
Anterwell Technology Ltd.
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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
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...220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
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Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
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...MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
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...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220......
Shenzhen Weitaixu Capacitor Co.,Ltd
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FDP075N15A-F102 MOSFET Power Electronics TO-220-3 N-Channel 75V 15A Transistor
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FDP075N15A-F102 MOSFET Power Electronics TO-220-3 N-Channel 75V 15A Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220
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...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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High Power MOSFET NVMJS1D4N06CL Power MOSFET 60 V, 1.4Ω, 220 A, Single N-Channel
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High Power MOSFET NVMJS1D4N06CL Power MOSFET 60 V, 1.4Ω, 220 A, Single N-Channel [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet
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JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet ♦♦♦♦Pls contact with us to get more informations of JY09M,thanks! The JY09M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-......
Shanghai Juyi Electronic Technology Development Co., Ltd
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IPP65R190CFD7XKSA1 Infineon Mosfet High Power TO-220-3
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IPP65R190CFD7XKSA1 Infineon MOSFET HIGH POWER NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: MOSFET Technology: Si Installation style: Through Hole Package/Box: TO-220-3 Transistor polarity: N-Channel Number of channels......
Eastern Stor International Ltd.
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