Anti EMI Super Junction MOSFET Stable Ultra Fast Switching For PFC Circuit
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...Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET......
Reasunos Semiconductor Technology Co., Ltd.
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PSF70060B Powercube Semi mosfet TO247 For Electric Vehicle Quick Charger Server
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... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-......
Angel Technology Electronics Co
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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4
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..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ 25°C 123A (Tc)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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HXY4409 30V P-Channel MOSFET
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... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C....
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF9321TRPBF High Performance MOSFET Power Electronics for Optimal Efficiency and Reliability
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...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-state resistance. This...
Shenzhen Sai Collie Technology Co., Ltd.
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Integrated Mosfet Power Transistor Chip SUD50P06-15L-E3 trench fet series
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...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction...
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
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... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Shenzhen Weitaixu Capacitor Co.,Ltd
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SUD25N06-45L Logic Level switching low Power Mosfet Transistor N - Channel 60-V (D-S) 175C
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...MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanche Current IAR 25 A Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 31 mJ Operating Junction......
Anterwell Technology Ltd.
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS and Industrial Drives
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ......
TOP Electronic Industry Co., Ltd.
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55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
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... MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating......
Shenzhen Hongxinwei Technology Co., Ltd
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