1200V SiC MOSFET TO263-7 Package AIMBG120R080M1 For Automotive
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AIMBG120R080M1 Automotive 1200V CoolSiC™ Trench MOSFET in TO263-7 package Description of AIMBG120R080M1 AIMBG120R080M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles. Specification Of AIMBG120R080M1 Product Status Active Technology SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Metal Practical High Voltage SiC Mosfet , N Type Silicon Carbide Semiconductor
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Product Description: Silicon Carbide MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that has been developed to optimize the performance of high-frequency and high-efficiency electrical applications. This Silicon Carbide ......
Reasunos Semiconductor Technology Co., Ltd.
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ......
Zhuhai Cersol Technology Co, Ltd
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SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
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...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
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6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC......
Zhenan Metallurgy Co., Ltd
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MC33GD3100EK Gate Drivers EV Inverter Control; IGBT & SiC GDIC
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Gate Drivers EV Inverter Control; IGBT & SiC GDIC Product Attribute Attribute Value Select Attribute Manufacturer: NXP Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Package / Case......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors
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QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds......
Wisdtech Technology Co.,Limited
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CAS325M12HM2 Field Effect Transistor Transistors FETs MOSFETs Arrays
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CAS325M12HM2 Specifications Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 444A (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 400A, 20V ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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