ADF5901WCCPZ RF Power Transistors High Output Power And Efficiency
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... • High Gain: 17.9dB @ 2.5GHz • High Efficiency: > 65% @ 2.5GHz • Low Quiescent Current: <100mA • RoHS Compliant • Package: 46-lead, 4mm x 6mm LFCSP Why ......
Shenzhen Sai Collie Technology Co., Ltd.
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ......
Mega Source Elec.Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High...
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high......
Shenzhen Weitaixu Capacitor Co.,Ltd
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Metal Oxide Semiconductor Mosfet Power Transistor High Rugged Avalanche
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...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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TIP3055 Silicon NPN Power Transistors high power mosfet transistors
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...Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power......
Anterwell Technology Ltd.
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5700-5900MHz Band High Power Output 100W RF Power Amplifier Highly Efficient Device For Modern Satellite Communication
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...High Power Output 100W RF Power Amplifier Highly Efficient Device for Modern Satellite Communication Needs Product Description Product Overview The 5700-5900MHz 100W RF Power Amplifier is a highly efficient and stable RF amplifier, which is mainly used in wireless communication, radar system and satellite communication applications. With excellent gain and power output, this product can meet the demand for high......
Nanjing Shinewave Technology Co., Ltd.
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