QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM
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... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Wireless Communication Module ADPA9007-2C-SX DC To 28GHz 2W RF Power Amplifier IC
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Wireless Communication Module ADPA9007-2C-SX DC To 28GHz 2W RF Power Amplifier IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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One-stop BOM Service RF power amplifier IC RF7459 RF7459TR13 Integrated Circuit in Stock
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ShenZhen QingFengYuan Technology Co.,Ltd.
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PA1800-2700MHz 100W RF Power Amplifier High Integration Device for EMC Testing Signal Amplification RF input interface SMA-F
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PA1800-2700MHz 100W RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA1800-2700MHz 100W RF Power Amplifier is engineered for professional signal amplification, combining high performance with ......
Nengxun Communication Technology Co.,Ltd.
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Mini-Circuits GVA-62+ SOT-89 RF Power Amplifiers
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...RF Power Amplifiers RF IC is an integrated circuit that is designed to transmit and receive radio frequency signals. It typically includes a range of components, such as amplifiers, mixers, and filters. RF ICs common features include: - Frequency range: This refers to the range of frequencies that the RF IC can transmit and receive. It is important to choose an RF IC......
Shenzhen GS Electronic Technology Co., Ltd. CN
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LM358DR Audio Power Amplifier IC / High Gain Amplifier For Power Supplies
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High Gain Amplifier LM358DR Chip 2 Channel Operational Amplifiers For Power Supplies FEATURES • Wide Supply Range of 3 V to 36 V (B Version) • Supply-Current of 300 µA (B Version, Typical) • Unity-Gain Bandwidth of 1.2 MHz (B Version) • Common-Mode Input ......
Shenzhen ATFU Electronics Technology ltd
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2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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TPA6205A1DGNR Audio Power Amplifier IC Audio Amplifiers 1.25W Mono Fully Diff ClassAB Aud Amp
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... Components – Improved PSRR (90 dB) and Wide Supply Voltage (2.5 V to 5.5 V) for Direct Battery Operation – Fully Differential Design Reduces RF Rectification –...
ChongMing Group (HK) Int'l Co., Ltd
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972
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...rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220 Package MAXIMUM RATINGS IC......
Anterwell Technology Ltd.
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electronics IC S-AV6 VHF HAM FM RF POWER AMPLIFIER POWER MODULE
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Specifications 1. Electronic Components 2. RoHS Compliant 3. Best Price & Original Brand New 4, No MOQ 5, Good quality&Quick delivery...
Hans Innovation Group
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