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power transistor igbt 40a 1200v

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IKW40N120T2 Insulated Gate Bipolar Transistor IGBT 40A 1200V 480W For Converters

China IKW40N120T2 Insulated Gate Bipolar Transistor IGBT 40A 1200V 480W  For Converters on sale
... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Multifunctional Power Transistor And Inverter IGBT 40A 1200V Fast Switching

China Multifunctional Power Transistor And Inverter IGBT 40A 1200V Fast Switching on sale
Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged High ruggedness performance • Very tight ......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

IXGH45N120 IGBT Power Module Transistors IGBTs Single 1200V 75A 300W TO247 IXYS 45N120

China IXGH45N120 IGBT Power Module Transistors IGBTs Single 1200V 75A 300W TO247 IXYS 45N120 on sale
IXGH45N120 Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 45A Power - Max 300W Switching Energy ......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free on sale
...40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free on sale
...40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

Excellent Quality FZ1200R12KF4 Transistor IGBT Module 1200V 1200A FZ1200R12KF6 EUPEC Power module

China Excellent Quality FZ1200R12KF4 Transistor IGBT Module 1200V 1200A FZ1200R12KF6 EUPEC Power module on sale
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Fast Electronics Co., Ltd

Address: Long Jin Road No. 4, Room 540, Long Jin Street , Liwan District , Guangzhou City, Guangdong, Province

FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264

China FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264 on sale
...40A 1200V Welding Machine IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description Employing NPT technology, Fairchild’s AND series of IGBTs......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

Multifunctional Power Transistor And IGBT High Voltage 1200V 40A

China Multifunctional Power Transistor And IGBT High Voltage 1200V 40A on sale
... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

NXH40T120L3Q1SG Automotive IGBT Modules 1200V Three Phase

China NXH40T120L3Q1SG Automotive IGBT Modules 1200V Three Phase on sale
...IGBT Modules 1200V Three Phase Automotive IGBT Modules NXH40T120L3Q1SG 1200V Three Phase IGBT Modules​ Product Description Of NXH40T120L3Q1SG NXH40T120L3Q1SG is a power module containing a three channel T−type neutral−point clamped (TNPC) circuit. Each channel has two 1200V, 40A IGBTs with inverse diodes and two 650V, 25A IGBTs......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V

China Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V on sale
...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ......
Shenzhen Wisdomlong Technology CO.,LTD

Address: 23E BlockB,Lushan Building,Chunfeng Road,Luohu District,Shenzhen,518001,China

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