100um Faceted C Orientation Sapphire Template Substrate for Optoelectronic Applications
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...Sapphire Substrates are crafted with a Sapphire Template layer, ensuring that every substrate is of premium quality. The substrate thickness is 100um, making it ideal for applications that require high durability and resistance to wear and tear. Our Sapphire Substrates are clear and exhibit visible natural inclusions, making it easy to monitor and ensure the quality of your application. Although the energy gap of Sapphire...
ARH Sapphire Co., Ltd
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GaN Template Grow Application SSP Sapphire Carrier Substrate Chip Custom Orientation
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...Sapphire carrier substrate chip for GaN template grow application Sapphire wafer carriers are manufactured to exacting specifications and offer a stable carrier for processing GaAs,GaN,AlN and other semiconductors Template. Sapphire wafer carriers are durable, chip, chemical and scratch resistant and will stand up to repeated use. Because of sapphire......
SHANGHAI FAMOUS TRADE CO.,LTD
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Thickness 1.0mm Sapphire Wafers Substrate Ssp Dsp C-Plane Single Crystal 99.999% Al2O3
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...making them highly desirable for a wide range of applications. In fact, sapphire is one of the hardest and most scratch-resistant materials available, with a Mohs hardness of 9, second only to diamond. In comparison to other materials, sapphire wafers are...
SHANGHAI FAMOUS TRADE CO.,LTD
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SSP Monocrystal Sapphire Wafer Substrate 50mm 100mm 150mm 200mm
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...Substrate Single Side Polished Wafer 2inch/4inch/6inch/8inch Description Chemically, sapphire is single crystal aluminum oxide (Al2O3), and is useful in a transmission range from 0.2 - 5.5µm.Sapphire , so making them ideal materials for demanding applications (such as laser systems) because of their extreme surface hardness, high thermal conductivity, high dielectric constant and resistance to common chemical acids and alkalis. And sapphire...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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High-Temperature Infrared Window Sapphire Wafer Al2O3 Substrate For LED And Blue Laser
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... for its exceptional physical and optical properties, forms the cornerstone of our state-of-the-art wafers, designed to meet the most stringent demands of today's technology landscape. Our Sapphire Wafers are crafted from the finest raw materials,...
Hangzhou Freqcontrol Electronic Technology Ltd.
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier
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...Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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8inch 6inch Sapphire Substrate Wafers Double Side Polished Sapphire Windows
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... of its unique properties make sapphire a preferred material for extreme mechanical, chemical & optical applications. Unlike glass, sapphire cannot be molded. Sapphire can be grown into near net shapes such as tubes and rod, then ground and polished if...
Jingjing Technology (Hubei) Co., Ltd
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GaN Substrates
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices......
JOPTEC LASER CO., LTD
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire......
China Abrasives Industry Hainan Corporation
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GaN Templates 2 & 4 inch
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...Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire......
Chongqing Newsin Technology Co., Ltd
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