IRF8714TRPBF MOSFET Power Electronics N-Channel Low RDS(on) at 4.5V VGS Package 8-SOIC
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... Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (......
Shenzhen Sai Collie Technology Co., Ltd.
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LT80N06AF 60V 80A N Channel Low Voltage MOSFET For Power Supplies
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... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various applications. This is a critical feature for applications that ......
Guangdong Lingxun Microelectronics Co., Ltd
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Practical Low Voltage MOSFET Multifunctional N Channel Low Rds
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High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON) *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ......
Reasunos Semiconductor Technology Co., Ltd.
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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
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...Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS =40V,ID =20A RDS(ON) < 35mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V P-Channel VDS =-40V,ID = -18A RDS(ON) <40mΩ @ VGS=-10V RDS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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20V N-Channel PowerTrench Power Mosfet Transistor FDV305N
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...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON...
Anterwell Technology Ltd.
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SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs
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...Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs Features AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS......
TOP Electronic Industry Co., Ltd.
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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
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SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Maximum ratings......
Guangdong Huixin Electronics Technology Co., Ltd.
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20V N-Channel PowerTrench Power Mosfet Transistor FDV305N
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...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON...
ChongMing Group (HK) Int'l Co., Ltd
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
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...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low......
Shenzhen Hongxinwei Technology Co., Ltd
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate ......
Mega Source Elec.Limited
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