2N4416 Transistor IC Chip Through Hole JFET N Channel 30V Low Ciss
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...Package options. DESCRIPTION The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room ......
Walton Electronics Co., Ltd.
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AOSS21311C MOSFET Power Electronics Transistors P-Channel 30V Low Gate Charge Package SOT-23-3
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...Channel 30V Low Gate Charge Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss......
Shenzhen Sai Collie Technology Co., Ltd.
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Integrated Circuit Chip QH8MA4TCR Mosfet Array 30V 9A Transistors 8-SMD Surface Mount
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... package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - Max 1.5W Operating Temperature 150°C (TJ) Features Of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor
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...30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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2A650V CS2N65A2 Low On-Resistance Fast Switching High Voltage MOSFET
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... 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage (Vgs) of ±30V, providing ample voltage for most switching applications. Additionally, this MOSFET has been...
Guangdong Lingxun Microelectronics Co., Ltd
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