RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ......
Anterwell Technology Ltd.
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Integrated Circuit Chip IMZ120R140M1H Single FETs MOSFETs Transistors TO-247-4
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... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC
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AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ ......
Shenzhen Sai Collie Technology Co., Ltd.
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ISO9001 Metal Oxide Semiconductor Fet Mosfet Transistor Multi Function
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Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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TLP250(F) Transistor Inverters Tv Circuit Board Chips , Led Driver Circuit Board
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...TRANSISTOR INVERTER INVERTERS tv circuit boards led driver circuit board Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET......
ChongMing Group (HK) Int'l Co., Ltd
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IRF3205 Mosfet IRF3205PBF IRF3205 Transistor IRF 3205 Power Mosfet Transistor N-Channel 55V 110A TO-220 Inverter
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Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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60V 10.8A Diodes Transistors FETS DMT6009LSS-13 Single MOSFET N Channel
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...Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET......
Angel Technology Electronics Co
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HY1906B HY1906 TO-263 Patch 60V120A FET MOS tube
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G-Resource Electronics Co.,Ltd
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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FDV303N Digital FET N-Channel MOSFET N-CH 25V 680MA SOT23 RF Transistors
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FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source......
Wisdtech Technology Co.,Limited
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