F7N65L TO-220F-3L N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high......
Shenzhen Hunt Electronics Co., Ltd
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N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F
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N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ......
Guangdong Huixin Electronics Technology Co., Ltd.
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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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...high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high......
Shenzhen ATFU Electronics Technology ltd
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Durable High Current Power Inductors 7A - 45A Current Range SMT Installation
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...3uH to 82uH · DCR range from 1.87mΩ to 33.44mΩ · Current range from 7A to 45A · Test Frequency : 10KHz / 0.1V@25℃ · Operating temperature: -40℃ to +125℃(ambient plus self-temperature rise) · ......
Shaanxi Shinhom Enterprise Co.,Ltd
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NH1GG69V250P 1250V 250A SiC MOSFET Module Low Rds(on) 3.3mΩ Fast Switching High Frequency Low Loss High Power Density Industrial Grade For PV Inverters and Motor Drives
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...-isolated gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most...
TOP Electronic Industry Co., Ltd.
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High power 5W Power consumption VOLTAGE Electronic Control Relay (JY-7A/12)
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High power 5W Power consumption VOLTAGE Electronic Control Relay (JY-7A/12) Main tech-parameters: 1 Modifiable range of voltage 10V-399V 2 Power consumption The most power consumption is less than 5W. 3 Operate time Over-voltage relay: 1.2 times modified ......
OUTER ELECTRONIC TECHNOLOGY (HK) LIMITED
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High Power 100W RF Power Amplifier 60dBm 1250MHz For Wireless Equipment
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... the interference of high radiated RF power to monitoring-unit and PA-Circuit; We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
Kimpok Technology Co., Ltd
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no...
Mega Source Elec.Limited
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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