Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd
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F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors
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... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...
Shenzhen Hunt Electronics Co., Ltd
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N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F
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...High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS Compliant Ordering Information Part Number: H10N65 Specifications: 600V......
Guangdong Huixin Electronics Technology Co., Ltd.
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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...high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high......
Shenzhen ATFU Electronics Technology ltd
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no...
Mega Source Elec.Limited
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ABC Power Cable 600V Overhead Service Cable ACSR Conductor Supported
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... for tem service at construction sites, as a service drop (power pole to service entrance) as a secondary cable (Pole to Pole), or street lighting. For service at 1000V or lower at a maximum conductor temperature of ......
CN Cable Group Co., Ltd.
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Ultra-Low 0.0015Ω Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175°C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion
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...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power Motor Drive Systems andnbsp; Description The IRF7351TRPBF is a high...
TOP Electronic Industry Co., Ltd.
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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High Power Frequency Core Electrical Induction Cooper Melting Furnace
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...: 600V Phase number: 3 phase Frequency: 60Hz Power factor: 0.45 ~ 0.5 (compensation) 1 ~ 0.9 (compensation) The three-phase power supply current unbalanced degree: less than 10% Maximum melting rate: 5t/h Max capacity: 12.0t Minimum capacity: 1.......
Wuxi Huadong Industrial Electrical Furnace Co.,Ltd.
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Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF
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... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are...
Guangzhou Topfast Technology Co., Ltd.
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