IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)>
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... High output power P1dB=37.0dBm(TYP.) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no...
Mega Source Elec.Limited
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