High Performance Mosfet Power Transistor With Extreme High Cell Density
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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High Performance Mosfet Power Transistor With Extreme High Cell Density
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Beijing Silk Road Enterprise Management Services Co.,LTD
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Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W
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VBE Technology Shenzhen Co., Ltd.
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QM56032 Wireless Communication Module High Performance RF Power Amplifier
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QM56032 Wireless Communication Module High Performance RF Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Industrial IGBT Water-cooling Plate, Aluminum High-performance Liquid Cooling Plate, 800mm Copper Cooling Plate
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...High-performance Liquid Cooling Plate, 800mm Copper Cooling Plate This high-performance liquid cold plate is made from aluminum and copper, ensuring efficient cooling for IGBT systems. With customizable sizes and surface treatments like anodizing and sandblasting, it caters to diverse industrial applications such as LED lighting, inverters, and power......
Guangdong Uchi Electronics Co.,Ltd
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High Performance Rf Power Amplifier , Durable Radio Frequency Amplifier
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TX-12 RF Amplifier Brief Introduction: Effectively...
Shenzhen TeXin electronic Co., Limited
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SI4010-C2-GSR RF Power Transistor - High Performance And Reliable Power Solution
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...RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is manufactured using a special GaN on SiC process that provides high efficiency, high power......
Shenzhen Sai Collie Technology Co., Ltd.
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RF Power Transistors MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON
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...RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(Min) Gain=6.0dB(Min) Isothermal Design for Rugged Performance......
Mega Source Elec.Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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30W 50V GaN HEMT Rf PA Power Amplifier RF Power Transistor for 5700- 5900MHz
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...Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is guaranteed for applications operating in the mentioned frequencies There is no guarantee of performance......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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