4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
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...Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification Of MSCSM170HM23CT3AG Part Number MSCSM170HM23CT3AG Technology Silicon Carbide (SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Metal Practical High Voltage SiC Mosfet , N Type Silicon Carbide Semiconductor
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Product Description: Silicon Carbide MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that has been developed to optimize the performance of high-frequency and high-efficiency electrical applications. This Silicon Carbide ......
Reasunos Semiconductor Technology Co., Ltd.
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ......
Zhuhai Cersol Technology Co, Ltd
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SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
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...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H-SiC Epitaxial Wafers for Ultra-High Voltage MOSFETs (100–500 μm, 6 inch)
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...SiC epitaxial wafers The rapid development of electric vehicles, smart grids, renewable energy, and high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities, and improved efficiency. Among wide bandgap semiconductors, silicon carbide (SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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RS485 Interface Remote Data Collection Unit , Electrical Power Grid System
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... Electricity Meter Power Grid System can support LV concentrator to complete the data communication channel switching for the smart energy meter of RS-485 communication method, ......
WUHAN RADARKING ELECTRONICS CORP.
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Civil Engineering 130KN/M Plastic Geogrid Uniaxial HDPE Grid Road Infrastructure Reinforcement Projects
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... such as polypropylene (PP) or high-density polyethylene (HDPE). Produced through extrusion, punching, and stretching processes, it forms a square or diamond-shaped grid structure with...
Shenzhou Earth Working Material Co. Ltd
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Multi Vendor API Interface Smart Micro Grid System Calinpay STS Prepayment Vending Type
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...m one decade of experience in the field. Flexible , scalable as well as stable as the system is , Calinpay is a Windows-based manufactuer independent solution that operates in an open infrastructure interfacing with a variety of smart metering systems and...
Shenzhen Calinmeter Co,.LTD
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC......
Zhenan Metallurgy Co., Ltd
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