IRFP7530PBF MOSFET Power Electronics High Power Handling Fast Switching
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... threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C...
Shenzhen Sai Collie Technology Co., Ltd.
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High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92
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High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ......
Sunbeam Electronics (Hong Kong) Limited
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NDP6060L High Power MOSFET Electronic Chip Fet Enhancement Mode TO-220
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NDP6060L Chipscomponent Electronic Components IC Chips NDP6060L High Power MOSFET electronic chip brand new original TO-220(TO-220-3) MOSFET N-Ch LL FET Enhancement Mode Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series NDP6060L Reference ......
Shenzhen Xinshengyuan Electronic Technology Co., Ltd.
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.
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IRFP064 MOSFET Transistor IC Chip 55V 110A High Power Through Hole
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...Powerful MOSFET for High Power Applications Pros and Cons of the IRFP064 MOSFET Are you seeking a powerful and reliable MOSFET for your high power applications? The IRFP064 is an excellent choice! This MOSFET boasts a drain-source voltage of 55V, a continuous drain current of 110A, and low on-resistance for efficient operation. Pros: - High power handling......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
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...MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.2 A Pulsed Drain Current 1) IDM -8 Maximum Power...
Shenzhen Canyi Technology Co., Ltd.
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3
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IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (......
Shenzhen Zhaocun Electronics Co., Ltd.
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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors
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... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to...
ChongMing Group (HK) Int'l Co., Ltd
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Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F
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Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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