FET MOSFET Integrated Circuit Chip IPD90N06S4-04 TO-252 60V 90A Silk Screen 4N0604
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IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ......
STJK(HK) ELECTRONICS CO.,LIMITED
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MOSFET 075N15A Integrated Circuit IC Power Supply ATM CRM CRS Selfserv Kiosk Hyosung Diebold Wincor NCR Fujitsu Hitachi 075N15A
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... processing. Your idea will be made a reality. Please contact us for pricing. Wechat/WhatsApp/Tel: +86-15919695112 Email: kevin@atmpart.net Prodcut name MOSFET 075N15A Integrated Circuit IC Power Supply ATM...
Beijing Chuanglong Century Science & Technology Development Co., Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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Integrated Circuit Chip IRFH5015PBF - HEXFET Power MOSFET
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...000 Category Discrete Semiconductor Products Family FETs - Single Series HEXFET® Packaging Tape & Reel (TR) FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25° C 10A Rds On...
Mega Source Elec.Limited
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CA3240E 4.5MHz BIMOS Op Amp with MOSFET Input/BI-FET Output 15kV ESD Protection Single or Dual Supplies from 5V to 16V Low Input Current for Precision Instrumentation Circuits
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...; Dual Version of CA3140 andbull; Internally Compensated andbull; MOSFET Input Stage - Very High Input Impedance (ZIN) 1.5TandOmega;andnbsp;(Typ) - Very Low Input Current (II) 10pA (Typ) at ......
TOP Electronic Industry Co., Ltd.
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1
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...MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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UCC5350MCDR IC Integrated Circuits SOIC-8 Isolated Gate Drivers
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..., and GaN FETs (UCC5350SBD). The UCC53x0S provides a split output that controls the rise and fall times individually. The UCC53x0M connects the gate of the transistor to an internal ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
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... Circuits Infineon IRF1405STRLPBF MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET......
Shenzhen Hongxinwei Technology Co., Ltd
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P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits
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... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and...
Shenzhen Winsun Technology Co., Ltd.
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Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General
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... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and...
Shenzhen ATFU Electronics Technology ltd
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