GaN On Diamond And Dimond On GaN Wafer By Epitaxial HEMT And Bonding
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and reliability are related to the temperature on the channel and Joule heating......
SHANGHAI FAMOUS TRADE CO.,LTD
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On Diamond Gallium Nitride Wafer Epitaxial HEMT And Bonding
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area According to statistics, the temperature of the working junction will drop Low 10 ° C can double the device life. The thermal conductivity of diamond is 3 to 3 higher tha......
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure
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...GaN Bulk GaN Substrates For LED,LD Or HEMT Structure PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT
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... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, ......
Homray Material Technology
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire epitaxial wafer, silicon wafer, gallium arsenide and GaN wafer. This kind of ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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