Low Loss IGBT Power Transistor IKW20N60T 600V 20A 166W Trenchstop IGBT3
|
...IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled......
Shenzhen Retechip Electronics Co., Ltd
|
650V-1200V IGBT Power Transistor For High Power Electronic Controls
|
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
|
Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
|
... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
|
IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
|
...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
Electronic Components Mosfet Power Transistor 30P03X TO-252 Standard Size
|
Electronic Components Mosfet Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide variety of applications. Mosfet Power Transistor General Features VDS=-30V,ID=-40A RDS(ON)<20mΩ@ VGS=10V RDS(ON)<32mΩ@ VGS=4.5V Mosfet Power Transistor Application ● Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Bipolar IGBT Power Transistor Through Hole
|
...Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED
|
IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
|
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
|
62mm 50A EPM Controller IGBT Power Module 1 PACK KEG900H600E4L
|
EPM controller IGBT module 1 PACK 62mm KEG900H600E4L Small temperature dependence of the turn-off switching loss Easy to connect in parallel Wide RBSOA (square up to 2 time of rated current) and high short- Circuit withstand capability Low loss and soft-......
Krunter Future Tech (Dongguan) Co., Ltd.
|
Electronic Components Mosfet Power Transistor Diode New Ic Chip STTH6003CW TO-247
|
Electronic components STTH6003CW TO-247 mosfet diode new ic chip Model number STTH6003CW Package TO- 247 D/ C 19+ 18+ 17+ Type Diode/ IC chip Condition In stock Email sales07@wtxcapacitors.com More product: Payment and shipping: A. By Express-such as DHL, ......
Shenzhen Weitaixu Capacitor Co.,Ltd
|
Electronic Components IGBT Power Module IGBT 1200V 300A FF300R12KT4
|
FF300R12KT4 IGBT Modules IGBT 1200V 300A PART NO Ic(A) Vce(sat) ton toff Rth(j-c) Pc (W) PACKAGING Tc=80℃ Max(V) (us) (us) K/W BSM50GB60DLC 50 2.45 0.04 0.12 0.44 280 34mm BSM75GB60DLC 75 2.45 0.063 0.155 0.35 355 34mm BSM100GB60DLC 100 2.45 0.025 0.13 0.......
Shenzhen Hongxinwei Technology Co., Ltd
|
Submit your “electronic controls igbt power transistor” inquiry in a minute :