High Power FDMA2002NZ Dual N Channel Mosfet 30v 2.9A 123mΩ
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High Power MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ High Power MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-......
Sunbeam Electronics (Hong Kong) Limited
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NTMFS4833NT1G Transistor N Channel Mosfet 30v 5 Pin 16A 156A
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... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V...
Shenzhen Res Electronics Limited
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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities
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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.......
Shenzhen Sai Collie Technology Co., Ltd.
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Surface Mount Integrated Circuit IC Chip IRF7413TRPBF F7413 N Channel Mosfet 30V 13A 2.5W
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...Channel MOSFET 30V 13A 2.5W Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Low ON Resistance High Voltage N Channel MOSFET 30V With 100% Avalanche Tested
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Durable Low ON Resistance Voltage N Channel MOSFET with 100% Avalanche Tested *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ......
Guangdong Lingxun Microelectronics Co., Ltd
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Anterwell Technology Ltd.
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
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SQ4410EY-T1-GE3 Automotive N-Channel MOSFET 30V 15A Vi-Shay VSSAF5M12-M3/H Surface Mounted
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ShenZhen QingFengYuan Technology Co.,Ltd.
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