FDMA530PZ P-Channel Power MOSFET-30V -6.8A 35mΩ
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High Power MOSFET FDMA530PZ P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ High Power MOSFET FDMA530PZ P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing......
Sunbeam Electronics (Hong Kong) Limited
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Transistors MSC360SMA120B Silicon Carbide N-Channel Power MOSFET TO-247-4
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... Drain Source Voltage: 1200V Continuous Drain Current At TC = 25 °C: 11A Continuous Drain Current At TC = 100 °C: 8A Pulsed Drain Current: 28A Linear Derating Factor: 0.52W/°C Functional Diagram Of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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JY13M 40V Surface Mount N And P Channel Power Mosfet Driver Ic Chip
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.... The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=...
Changzhou Bextreme Shell Motor Technology Co.,Ltd
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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
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...8A N Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 500V/8A......
Shanghai Juyi Electronic Technology Development Co., Ltd
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Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor
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This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: MOSFET Power Electronics Part Number: SPD08P06PGBTMA1 Voltage: 8 V......
Shenzhen Sai Collie Technology Co., Ltd.
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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load ......
Anterwell Technology Ltd.
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N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube
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General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ......
Changzhou Junqi International Trade Co.,Ltd
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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load ......
ChongMing Group (HK) Int'l Co., Ltd
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CUS08F30 30V/8A N-Channel MOSFET Ultra-Low 8mΩ RDS(on) SOD-323 Package Fast Switching, 100% Avalanche Tested, Ideal for Power Management and DC-DC Converters
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CUS08F30 andnbsp; 1. Applications andbull; High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit Type Description Select......
TOP Electronic Industry Co., Ltd.
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IRF840 mosfet N-Channel 500V 8A TO-220AB IRF840PBF
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...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V Power......
Shenzhen Quanyuantong Electronics Co., Ltd.
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