MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
|
|
...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ......
Wisdtech Technology Co.,Limited
|
MJL21193 MJL21194 power mosfet module Silicon Power Transistors
|
|
Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head ......
Anterwell Technology Ltd.
|
BUV21G - ON Semiconductor - SWITCHMODE Series NPN Silicon Power Transistor
|
|
... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) ......
Mega Source Elec.Limited
|
MJL21193 MJL21194 power mosfet module Silicon Power Transistors
|
|
Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head ......
ChongMing Group (HK) Int'l Co., Ltd
|
AP12N10D Power Switch Transistor , Original Silicon Power Transistor
|
|
...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
600mA Silicon Power Transistor NPN Power Transistor High Current
|
|
SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
MJE3055T TO-220 Complementary Silicon Plastic Power Transistors
|
|
...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor......
Shenzhen Sai Collie Technology Co., Ltd.
|
RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V
|
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The...
Shenzhen Koben Electronics Co., Ltd.
|
N Channel 175 MOhm Typ Mosfet Power Transistor SMD / SMT Installation HV Package
|
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines......
Shenzhen Weitaixu Capacitor Co.,Ltd
|
Honeywell SPS5713 51199930-100 Main Rack Power Transistor Device
|
...Power Transistor Device Product Details: 51199930100 DISCONTINUED BY MANUFACTURER MAIN POWER RACK INPUT:100-240 VAC,47-63 Hz 10A OUTPUT:24-26 VDC,20A AMBIENT EMPERATURE: O"C TO 60 °C 15.00 lbs CC-TAIX11 51308365-175 CC-TDOB11 51308373-175 CC-TDIL01 51308386-175 CC-TAIM01 51305959-175 CC-TAIX01 51308363-175 CC-TCF901 51308301-175 CC-TDOB01 51308371-175 CC-TAOX11 51308353-175...
Sumset International Trading Co.,Ltd
|
