Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
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GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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... Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High Speed. : tf=0.30pμs (Max.) ●Low Saturation Voltage : VCE (sat)=2.7V (Max.) ●FRD ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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KWP75H12E4-7M Versatile IGBT Module Fast Switching Industrial Igbt Power Module ODM
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... Gate Bipolar Transistor Assembly (IGBT), an Isolated Gate Thyristor Module, and an Insulated Gate Bipolar Transistor Element in a single package. This high-performance module is designed to provide efficient power switching capabilities in a wide range of...
Krunter Future Tech (Dongguan) Co., Ltd.
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BIDW30N60T Trench Field Stop IGBT 600V 60A 230W Through Hole TO-247
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...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
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... Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: ......
Shenzhen Retechip Electronics Co., Ltd
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor
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...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT......
ChongMing Group (HK) Int'l Co., Ltd
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Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor
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Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power ......
Guangdong Lingxun Microelectronics Co., Ltd
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General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board
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... a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you...
Joyoung International Trading Co.,Ltd
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