rf power transistors high power

Brand Name:Analog Devices Inc.

Model Number:ADF5901WCCPZ

Place of Origin:Multi-origin

... • High Gain: 17.9dB @ 2.5GHz • High Efficiency: > 65% @ 2.5GHz • Low Quiescent Current: <100mA • RoHS Compliant • Package: 46-lead, 4mm x 6mm LFCSP Why ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

Brand Name:Hua Xuan Yang

Model Number:15P03C2

Place of Origin:ShenZhen China

...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power...

Place of Origin:CN

Brand Name:Original Factory

Model Number:CGH40025P

CGH40025P GaN IC 25W RF Power GaN High Electron Mobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:SWT

Model Number:SW-PA-57005900-50C

Place of Origin:China

...High Power Output 100W RF Power Amplifier Highly Efficient Device for Modern Satellite Communication Needs Product Description Product Overview The 5700-5900MHz 100W RF Power Amplifier is a highly efficient and stable RF amplifier, which is mainly used in wireless communication, radar system and satellite communication applications. With excellent gain and power output, this product can meet the demand for high...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Keysight/Agilent/HP

Model Number:Agilent N1913A

...RF power from 9 kHz to 110 GHz over a wide –70 dBm to +44 dBm span. LAN, USB and GPIB make it drop-in code-compatible with legacy E4418/19B scripts yet future-proof for LXI networks, while support for all E-, 8480- and USB power sensors protects installed spares. Buying ...

Brand Name:NENGXUN

Model Number:NX-PA1800-2700

Place of Origin:China

...RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA1800-2700MHz 100W RF Power Amplifier is engineered for professional signal amplification, combining high performance with robust functionality. Key Features High Integration: Compact structure ensures seamless integration into various systems. Testing Capability: Supports power...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401...

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

...Transistors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high side switch. FEATURES Vertical power...

Brand Name:Vinncom

Model Number:VN-AT-18G-300W-ONx

Place of Origin:China

High Frequency 18GHz 300W N Male-N Female 10dB Attenuator Wide working frequency range Low standing wave High attenuation accuracy Part Number VN-AT-18G-300W-ONx Operating Frequency DC-18 GHZ Impedance ( Ohm ) 50 Application Indoor & Outdoor Degree of ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:TX TELSIG

Model Number:TX-DJM5B

Place of Origin:China

1.5G drone signal blocker module with high power UAV jammer system No. Items Brand Name Frequency (MHz) Output Power dBm 1 Anti Drone Signal Jammer Module 433 MHz 433 MHz 5W 37dBm 10W 40dBm 30W 45dBm 50W 47dBm 100W 50dBm 900 MHz GPS L2 1.2GHz 1.4GHz GPS L1...