rf power transistor wide band

Brand Name:VBE

Model Number:VBE6003H

Place of Origin:CHINA

Brand Name:Texin

Model Number:TX-50W

Place of Origin:Guang Dong china

... test by 24-28V,the band and power can get full .The module inner takes newest technology chips that operating it can emit signal effectively.Widely use in government,Large entertainment venues,Military Neighborhood.It become more and more significant in

Brand Name:Silicon Labs

Model Number:SI4703-C19-GMR

Place of Origin:Multi-origin

...RF Power Transistor Product Description: The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power

Place of Origin:MALAYSIA

Brand Name:ERICSSON

Model Number:PTB20245

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:SWT

Model Number:SW-PA-06001020-47C

Place of Origin:China

... key features: Wide Frequency Range: Supports 600-1020MHz, suitable for broadcasting, public safety, and military communication. High Output Power: Delivers 50W (47dBm) output, enhancing signal transmission and coverage. High Gain: Provides over 40dB gain,

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Model Number:RF 1 in 2 out

Place of Origin:CHINA

RF 1 in 2 out wide band DIN Connector Hybrid Combiner 3dB Bridge Coupler Product Description: u Ultra wide-band, multi-section design u Flat response 698 to 4000 MHz u Minimal RF Insertion Loss u DIN(f)Connectors u Rugged, High Reliability, RoHS u Low Passive Intermodulation (PIM) u 500 Watt Average Main Line Power Frequency: 698 - 4000 MHz VSWR, all ports: 1.3:1 max Intermod., PIM: <-160 dBc using two +43 dBm tones Power...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Keysight/Agilent/HP

Model Number:Keysight/Agilent E9300A

The pre-owned Agilent E9300A extends average-power measurements from 10 MHz to 18 GHz while delivering a wide –60 dBm to +20 dBm span and < ±1 % linearity, giving true RMS readings on any modulation format without range-switch glitches. Its embedded EEPROM...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root ....

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:Vinncom

Model Number:VN-PD-05560-SMA3

Place of Origin:China

...Power Divider Wide band Good VSWR at all ports High isolation VN-PD-05560-SMA3.pdf Part Number VN-PD-05560-SMA3 Operating Frequency ( MHz ) 550-6000 Impedance ( Ohm ) 50 VSWR ≤1.25 Split Loss (dB) ≤7.4 Isolation(dB) ≥20 Application Indoor Operating Temperature ( ℃ ) -40 ~ + 80 Interface SMA Female Handling Power...